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2sc1472.pdf Principales características:

2SC1472(K) Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline TO-92 (1) 3 2 1. Emitter 1 2. Collector 3. Base 3 2 1 2SC1472 (K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 10 V Collector current IC 300 mA Collector peak current iC(peak) 500 mA Collector power dissipation PC 500 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 2 2SC1472 (K) Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO 30 V IC = 1 mA, RBE = voltage Collector cutoff current ICBO 100 nA VCB = 30 V, IE = 0 Emitter cutoff current IEBO 100 nA VEB = 10 V, IC = 0 DC current transfer ratio hFE1*1 2000 100000

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 2sc1472.pdf Design, MOSFET, Power

 2sc1472.pdf RoHS Compliant, Service, Triacs, Semiconductor

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