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HAT2043R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-668D (Z) 5th. Edition February 1999 Features Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP 8 5 6 7 8 4 3 2 1 7 8 5 6 D D D D 4 2 G G 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain S 3 S1 MOS2 MOS1 HAT2043R Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 20 V Drain current ID 8A Drain peak current ID(pulse)Note1 64 A Body-drain diode reverse drain current IDR 8A Channel dissipation Pch Note2 2.0 W Channel dissipation Pch Note3 3.0 W Channel temperature Tch 150 C Storage temperature Tstg 55 to + 150 C Note 1. PW 10 s, duty cycle 1% 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x

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