Todos los transistores

 

2n3716.pdf Principales características:

2n37162n3716

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3716 DESCRIPTION With TO-3 package APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 4 A PD Total Power Dissipation TC=25 150 W Tj Junction temperature 200 Tstg Storage temperature -65 200 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.17 /W INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specificat

 

Keywords - ALL TRANSISTORS. Principales características

 2n3716.pdf Design, MOSFET, Power

 2n3716.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n3716.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.