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2n4906.pdf Principales características:

2n49062n4906

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4906 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- hFE= 25-100 @IC= -2.5A Complement to Type 2N4915 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V V Collector-Emitter Voltage -80 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current-Continuous -5 A I Base Current-Continuous -1 A B P Collector Power Dissipation@T =25 87.5 W C C T Junction Temperature 200 J Tstg Storage Temperature -65 200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 /W isc Website www.iscsemi.cn INCHANGE Semic

 

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 2n4906.pdf Design, MOSFET, Power

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