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2n4909.pdf Principales características:

2n49092n4909

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4909 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -0.75V(Max.)@ IC= -4A DC Current Gain- hFE= 20-80 @IC= -4A APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V V Collector-Emitter Voltage -80 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current-Continuous -10 A I Base Current-Continuous -4 A B P Collector Power Dissipation@T =25 150 W C C T Junction Temperature 200 J Tstg Storage Temperature -65 200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 /W isc Website www.iscsemi.cn INCHANGE Semiconductor isc Product Specificati

 

Keywords - ALL TRANSISTORS. Principales características

 2n4909.pdf Design, MOSFET, Power

 2n4909.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n4909.pdf Database, Innovation, IC, Electricity

 

 
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