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2n4910.pdf Principales características:

2n49102n4910

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4910 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 40V(Min) Low Collector Saturatioin Voltage- VCE(sat)= 0.6V(Max.)@ IC= 1A Wide Area of Safe Operation APPLICATIONS Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 1 A C I Collector Current-Peak 4 A CM IB Collector Current-Continuous 1 A Collector Power Dissipation P 25 W C @ T =25 C T Junction Temperature 200 J Tstg Storage Temperature Range -65 200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case

 

Keywords - ALL TRANSISTORS. Principales características

 2n4910.pdf Design, MOSFET, Power

 2n4910.pdf RoHS Compliant, Service, Triacs, Semiconductor

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