2n4918 2n4919 2n4920.pdf Principales características:
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION With TO-126 package Complement to type 2N4921/4922/4923 Excellent safe operating area Low collector saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N4918 -40 VCBO Collector-base voltage 2N4919 Open emitter -60 V 2N4920 -80 2N4918 -40 VCEO Collector-emitter voltage 2N4919 Open base -60 V 2N4920 -80 VEBO Emitter-base voltage Open collector -5 V IC Collector current -1 A ICM Collector current-Peak -3 A IB Base current -1 A PD Total power dissipation TC=25 30 W Tj Junction temperature 150 Tstg Storage temperature -6
Keywords - ALL TRANSISTORS. Principales características
2n4918 2n4919 2n4920.pdf Design, MOSFET, Power
2n4918 2n4919 2n4920.pdf RoHS Compliant, Service, Triacs, Semiconductor
2n4918 2n4919 2n4920.pdf Database, Innovation, IC, Electricity
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Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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