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2n6098 2n6099 2n6100 2n6101.pdf Principales características:

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package High current capability APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6098 70 2N6099 70 VCBO Collector-base voltage Open emitter V 2N6100 80 2N6101 80 2N6098 70 2N6099 70 VCEO Collector-emitter voltage Open base V 2N6100 80 2N6101 80 VEBO Emitter-base voltage Open collector 8 V IC Collector current 10 A PT Total power dissipation TC=25 75 W Tj Junction temperature 150 Tstg Storage temperature -65 150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to ca

Keywords - ALL TRANSISTORS. Principales características

 2n6098 2n6099 2n6100 2n6101.pdf Design, MOSFET, Power

 2n6098 2n6099 2n6100 2n6101.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n6098 2n6099 2n6100 2n6101.pdf Database, Innovation, IC, Electricity