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2sc1227.pdf Principales características:

2sc12272sc1227

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1227 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For clocked voltage converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 300 V CBO V Collector-Emitter Voltage 200 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 10 A C Collector Power Dissipation P 100 W C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 1.25 /W R th j-c 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1227

 

Keywords - ALL TRANSISTORS. Principales características

 2sc1227.pdf Design, MOSFET, Power

 2sc1227.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc1227.pdf Database, Innovation, IC, Electricity

 

 

 


 
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