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2sc1383.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Transistor 2SC1383 DESCRIPTION Low Collector Saturation Voltage Complement to Type 2SA683 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplification and driver amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 1 A C I Collector Current-Peak 1.5 A CM Collector Power Dissipation P 1 W C @T =25 C T Junction Temperature 150 J Storage Temperature Range -55 150 T stg 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Transistor 2SC1383 ELECTRICAL CHARACTERISTICS T =25 u

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