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2sc2738.pdf Principales características:

isc Silicon NPN Power Transistor 2SC2738 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Speed Switching Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier, switching regulators, inverters, solenoid and relay drivers applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 2 A C I Collector Current-Peak 4 A CM I Base Current-Continuous 0.5 A B Collector Power Dissipation P 25 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silico

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 2sc2738.pdf Design, MOSFET, Power

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