2sc4205.pdf datasheet:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4205 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 5 A C I Collector Current-Peak 7 A CM Collector Power Dissipation 1.5 @T =25 a P W C Collector Power Dissipation 40 @T =25 C Junction Temperature 150 T J Storage Temperature -55 150 T stg 1 isc Website www.iscsemi.cn isc & iscsemi is registered trademark