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2sc4298.pdf Principales características:

isc Silicon NPN Power Transistor 2SC4298 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base voltage 10 V EBO I Collector Current-Continuous 15 A C I Collector Current-Peak 30 A CM I Base Current-Continuous 5 A B Collector Power Dissipation P 80 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC4298 ELECTRICAL CHARA

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