Todos los transistores

 

2sc6090.pdf Principales características:

2sc60902sc6090

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6090 DESCRIPTION Collector-Base Breakdown Voltage- V = 1500V (Min) (BR)CEO High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 700 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 10 A C I Collector Current-Pulse 25 A CP Collector Power Dissipation 2 @ T =25 a P W C Collector Power Dissipation 35 @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc Website www.iscsemi.cn isc & iscsemi is registered trademark INCHANGE Semiconductor isc

 

Keywords - ALL TRANSISTORS. Principales características

 2sc6090.pdf Design, MOSFET, Power

 2sc6090.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc6090.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.