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2sc6098.pdf Principales características:

isc Silicon NPN Power Transistor 2SC6098 DESCRIPTION Large current capacitance High-speed switching High allowable power dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 120 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 6.5 V EBO I Collector Current-Continuous 2.5 A C Collector Current-Peak 4 A I CM Collector Power Dissipation 15 @ T =25 C P W C Collector Power Dissipation 0.8 @T =25 a T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC6098 E

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 2sc6098.pdf Design, MOSFET, Power

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