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2sd1046.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1046 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB816 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For LF power amplifier, 50W output large power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 120 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 8 A C I Collector Current-Pulse 12 A CP Collector Power Dissipation P 80 W C @ T =25 C T Junction Temperature 150 J Storage Temperature Range -40 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark

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