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2sd1127.pdf Principales características:

isc Silicon NPN Darlington Power Transistor 2SD1127 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High DC Current Gain h = 1000(Min) @I = 10A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 120 V CBO V Collector-Emitter Voltage 120 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 10 A C I Collector Current-Peak 15 A CP Collector Power Dissipation P 50 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1127 ELECTRICAL CHARACTE

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