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2sd1268.pdf Principales características:

isc Silicon NPN Power Transistor 2SD1268 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB943 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 130 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 3 A C I Collector Current-Peak 6 A CM Collector Power Dissipation 30 @ T =25 C P W C Collector Power Dissipation 2 @ T =25 a T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered tradem

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