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aot286l.pdf Principales características:

isc N-Channel MOSFET Transistor AOT286L FEATURES Static drain-source on-resistance RDS(on) 6m Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Be ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 80 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 70 A D I Drain Current-Single Pulsed 245 A DM P Total Dissipation @T =25 167 W D C T Max. Operating Junction Temperature 175 j T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.9 1 isc website www.iscsemi.cn isc & iscsemi

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