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irfr13n20d.pdf Principales características:

isc N-Channel MOSFET Transistor IRFR13N20D, IIRFR13N20D FEATURES Static drain-source on-resistance RDS(on) 235m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V DSS V Gate-Source Voltage 30 V GS I Drain Current-Continuous 13 A D I Drain Current-Single Pulsed 52 A DM P Total Dissipation @T =25 110 W D C T Max. Operating Junction Temperature 175 j T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(j-c) 1.4 Channel-to-ambient thermal resistance /W Rth(j-a) 110 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark

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