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buz101s.pdf Principales características:

BUZ 101S SIPMOS PowerTransistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.05 RDS(on) Enhancement mode Continuous drain current 22 A ID Avalanche rated dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ101S P-TO220-3-1 Q67040-S4013-A2 Tube BUZ101S E3045A P-TO263-3-2 Q67040-S4013-A6 Tape and Reel BUZ101S E3045 P-TO263-3-2 Q67040-S4031-A5 Tube Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current A ID TC =25 C 22 TC = 100 C 16 Pulsed drain current 88 IDpulse TC =25 C Avalanche energy, single pulse 90 mJ EAS ID =22A, VDD =25V, RGS =25 5.5 Avalanche energy, periodic limited by Tjmax EAR 6 kV/ s Reverse diode dv/dt dv/dt IS =22A, VDS =40V, di/dt = 20

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