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BUZ 102S SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.018 RDS(on) Enhancement mode Continuous drain current 52 A ID Avalanche rated dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ102S P-TO220-3-1 Q67040-S4011-A2 Tube BUZ102S E3045A P-TO263-3-2 Q67040-S4011-A6 Tape and Reel BUZ102S E3045 P-TO263-3-2 Q67040-S4011-A5 Tube Maximum Ratings, at Tj = 25 C unless unless specified Parameter Symbol Value Unit Continuous drain current A ID TC = 25 C 52 TC = 100 C 37 Pulsed drain current 208 IDpulse TC = 25 C Avalanche energy, single pulse 245 mJ EAS ID =52A, VDD =25V, RGS =25 12 Avalanche energy, periodic limited by Tjmax EAR 6 kV/ s Reverse diode dv/dt dv/dt IS =52A, VDS =40V, di/dt =

 

Keywords - ALL TRANSISTORS. Principales características

 buz102s.pdf Design, MOSFET, Power

 buz102s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 buz102s.pdf Database, Innovation, IC, Electricity

 

 
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