Todos los transistores

 

buz111sl.pdf Principales características:

buz111slbuz111sl

BUZ 111SL SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.007 RDS(on) Enhancement mode Continuous drain current 80 A ID Avalanche rated Logic Level dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111SL P-TO220-3-1 Q67040-S4002-A2 Tube BUZ111SL E3045A P-TO263-3-2 Q67040-S4002-A6 Tape and Reel BUZ111SL E3045 P-TO263-3-2 Q67040-S4002-A5 Tube Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current A ID TC = 25 C, 1) 80 TC = 100 C 80 Pulsed drain current 320 IDpulse TC = 25 C Avalanche energy, single pulse 700 mJ EAS ID = 80 A, VDD = 25 V, RGS = 25 30 Avalanche energy, periodic limited by Tjmax EAR 6 kV/ s Reverse diode dv/

 

Keywords - ALL TRANSISTORS. Principales características

 buz111sl.pdf Design, MOSFET, Power

 buz111sl.pdf RoHS Compliant, Service, Triacs, Semiconductor

 buz111sl.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.