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ipb051ne8n-g ipi05cne8n-g ipp054ne8n-g.pdf Principales características:

ipb051ne8n-g_ipi05cne8n-g_ipp054ne8n-gipb051ne8n-g_ipi05cne8n-g_ipp054ne8n-g

IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features V 85 V DS N-channel, normal level R 5.1 m DS(on),max (TO 263) Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Type IPB051NE8N G IPI05CNE8N G IPP054NE8N G Package PG-TO263-3 PG-TO262-3 PG-TO220-3 Marking 051NE8N 05CNE8N 054NE8N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous drain current T =25 C2) 100 A D C T =100 C 100 C I T =25 C 400 Pulsed drain current3) D,pulse C E Avalanche energy, sin

 

Keywords - ALL TRANSISTORS. Principales características

 ipb051ne8n-g ipi05cne8n-g ipp054ne8n-g.pdf Design, MOSFET, Power

 ipb051ne8n-g ipi05cne8n-g ipp054ne8n-g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipb051ne8n-g ipi05cne8n-g ipp054ne8n-g.pdf Database, Innovation, IC, Electricity

 

 
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