ipp45n04s4l-08 ipb45n04s4l-08 ipi45n04s4l-08.pdf Principales características:
IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 7.6 m DS(on),max I 45 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB45N04S4L-08 PG-TO263-3-2 4N04L08 IPI45N04S4L-08 PG-TO262-3-1 4N04L08 IPP45N04S4L-08 PG-TO220-3-1 4N04L08 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C, V =10V 45 A Continuous drain current1) D C GS T =100 C, V =10V2) 42 C GS I T =25 C 180 Pulsed drain current2) D,pulse C I =22A 55 mJ Avalanche energy, single pulse2) E AS D I Avalanche current, single pulse - 45 A AS V - Gate source voltag
Keywords - ALL TRANSISTORS. Principales características
ipp45n04s4l-08 ipb45n04s4l-08 ipi45n04s4l-08.pdf Design, MOSFET, Power
ipp45n04s4l-08 ipb45n04s4l-08 ipi45n04s4l-08.pdf RoHS Compliant, Service, Triacs, Semiconductor
ipp45n04s4l-08 ipb45n04s4l-08 ipi45n04s4l-08.pdf Database, Innovation, IC, Electricity
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