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2n5020 2n5021.pdf Principales características:

2n5020_2n5021

Databook.fxp 1/13/99 2 09 PM Page B-18 B-18 01/99 2N5020, 2N5021 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage 50 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 500 mW Power Derating 4 mW/ C Storage Temperature Range 65 C to + 200 C At 25 C free air temperature 2N5020 2N5021 Process PJ32 Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GDO 25 25 V IG = 1 A, VDS = V Gate Reverse Current IGSS 11 nA VGS = 15V, VDS = V Gate Source Cutoff Voltage VGS(OFF) 0.3 1.5 0.5 2.5 V VDS = 15V, ID = 1 nA Drain Saturation Current (Pulsed) IDSS 0.3 1.2 1 3.5 mA VDS = 15V, VGS = V Dynamic Electrical Characteristics Common Source gfs 1 3.5 1.5 6 m

 

Keywords - ALL TRANSISTORS. Principales características

 2n5020 2n5021.pdf Design, MOSFET, Power

 2n5020 2n5021.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n5020 2n5021.pdf Database, Innovation, IC, Electricity

 

 

 


 
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