2n6453 2n6454.pdf datasheet:

Databook.fxp 1/13/99 2 09 PM Page B-26 B-26 01/99 2N6453, 2N6454 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Audio Amplifiers 2N6453 2N6454 Low-Noise, High Gain Reverse Gate Source Voltage 20 V 25 V Amplifiers Reverse Gate Drain Voltage 20 V 25 V Continuous Forward Gate Current 10 mA 10 mA Low-Noise Preamplifiers Continuous Device Power Dissipation 360 mW 360 mW Power Derating 2.88 mW/ C 2.88 mW/ C At 25 C free air temperature 2N6453 2N6454 Process NJ132L Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS 20 25 V IG = 1 A, VDS = V 0.1 nA VGS = 10V, VDS = V 0.5 nA VGS = 15V, VDS = V Gate Reverse Current IGSS 0.2 A VGS = 10V, VDS = V TA = 125 C 1 A VGS = 15V, VDS = V TA = 1