irfh5010pbf.pdf Principales características:
IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS(on) max 9.0 m (@VGS = 10V) Qg (typical) 67 nC RG (typical) 1.2 ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (
Keywords - ALL TRANSISTORS. Principales características
irfh5010pbf.pdf Design, MOSFET, Power
irfh5010pbf.pdf RoHS Compliant, Service, Triacs, Semiconductor
irfh5010pbf.pdf Database, Innovation, IC, Electricity
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