irh9230.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irh9230.pdf Principales características:

Provisional Data Sheet No. PD-9.1391 IRH9230 AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Product Summary -200 Volt, 0.8 RAD HARD HEXFET , International Rectifier s P-Channel RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as IRH9230 -200V 0.8 -6.5A high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier s P-Channel RAD HARD HEXFETs retain identical electrical specifications up Features to 1 x 105 Rads (Si) total dose. No compensation in gate Radiation Hardened up to 1 x 105 Rads (Si) drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads Single Event Burnout (SEB) Hardened