frm9230.pdf datasheet:

FRM9230D, FRM9230R, FRM9230H 4A, -200V, 1.30 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 4A, -200V, RDS(on) = 1.30 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically - Survives 2E12 Typically If Current Limited to IDM Photo Current - 3nA Per-RAD(Si)/sec Typically Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Description Symbol The Harris Semiconductor Sector has designed a series of SECOND GENERA- TION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m