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ixfc22n60p.pdf Principales características:

ixfc22n60pixfc22n60p

IXFC 22N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 12 A Power MOSFET RDS(on) 360 m ISOPLUS220TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) VDSS TJ = 25 C to 150 C 600 V E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 30 V VGSM Tranisent 40 V G ID25 TC = 25 C12 A D S IDM TC = 25 C, pulse width limited by TJM 66 A (Isolated back surface*) IAR TC = 25 C22 A G = Gate D = Drain EAR TC = 25 C40 mJ S = Source EAS TC = 25 C 1.0 J Features l dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS 10 V/ns Silicon chip on Direct-Copper-Bond substrate TJ 150 C, RG = 4 - High power dissipation PD TC = 25 C 130 W - Isolated mo

 

Keywords - ALL TRANSISTORS. Principales características

 ixfc22n60p.pdf Design, MOSFET, Power

 ixfc22n60p.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixfc22n60p.pdf Database, Innovation, IC, Electricity

 

 
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