Todos los transistores

 

ixfr180n085.pdf Principales características:

ixfr180n085ixfr180n085

HiPerFETTM Power MOSFETs IXFR 180N085 VDSS = 85 V ISOPLUS247TM ID25 = 180 A (Electrically Isolated Back Surface) RDS(on)= 7 mW trr 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C85 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 85 V VGS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C (MOSFET chip capability) 180 A Isolated back surface* ID(RMS) External lead current limit 76 A IDM TC = 25 C, Note 1 720 A IAR TC = 25 C 180 A G = Gate D = Drain S = Source EAR TC = 25 C60 mJ EAS TC = 25 C3 J * Patent pending dv/dt IS IDM, di/dt 100 A/ms, VDD VDSS 5 V/ns TJ 150 C, RG = 2 W Features PD TC = 25 C 400 W Silicon chip on Direct-Copper-Bond TJ -55 ... +150 C substrate TJM 150 C - High power dissipation Tstg -55 ... +150 C - Isolated mou

 

Keywords - ALL TRANSISTORS. Principales características

 ixfr180n085.pdf Design, MOSFET, Power

 ixfr180n085.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixfr180n085.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.