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ixgh20n60-a ixgm20n60-a.pdf Principales características:

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 20 N60 600 V 40 A 2.5 V High speed IGBT IXGH/IXGM 20 N60A 600 V 40 A 3.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C40 A IC90 TC = 90 C20 A TO-204 AE (IXGM) ICM TC = 25 C, 1 ms 80 A SSOA VGE= 15 V, TVJ = 125 C, RG = 82 ICM = 40 A (RBSOA) Clamped inductive load, L = 100 H @ 0.8 VCES PC TC = 25 C 150 W C TJ -55 ... +150 C G = Gate, C = Collector, TJM 150 C E = Emitter, TAB = Collector Tstg -55 ... +150 C Md Mounting torque (M3) 1.13/10 Nm/lb.in. Features International standard packages Weight TO-204 = 18 g, TO-247 = 6 g 2nd generation HDMOSTM process Maximum lead temperature for soldering 300 C Low VCE(sat) 1.6 mm (0.062 in.) from case f

Keywords - ALL TRANSISTORS. Principales características

 ixgh20n60-a ixgm20n60-a.pdf Design, MOSFET, Power

 ixgh20n60-a ixgm20n60-a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixgh20n60-a ixgm20n60-a.pdf Database, Innovation, IC, Electricity