Todos los transistores

ixgh64n60b3.pdf Principales características:

Preliminary Technical Information IXGH64N60B3 VCES = 600V GenX3TM 600V IGBT IXGT64N60B3 IC110 = 64A Medium speed low Vsat PT VCE(sat) 1.8V IGBTs for 5 - 40kHz switching tfi(typ) = 88ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C (TAB) C E IC110 TC = 110 C 64 A ICM TC = 25 C, 1ms 400 A TO-268 (IXGT) SSOA VGE = 15V, TVJ = 125 C, RG = 3 ICM = 200 A (RBSOA) Clamped inductive load @ 600V PC TC = 25 C 460 W G E TJ -55 ... +150 C C (TAB) TJM 150 C Tstg -55 ... +150 C G = Gate C = Collector E = Emitter TAB = Collector TL 1.6mm (0.062 in.) from case for 10s 300 C TSOLD Plastic body for 10 seconds 260 C Features Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. Weight TO-247 6 g Op

Keywords - ALL TRANSISTORS. Principales características

 ixgh64n60b3.pdf Design, MOSFET, Power

 ixgh64n60b3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixgh64n60b3.pdf Database, Innovation, IC, Electricity