ixgt28n60b.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ixgt28n60b.pdf Principales características:

Low VCE(sat) IGBT IXGH 28N60B VCES = 600 V IXGT 28N60B IC25 = 40 A VCE(sat) = 2.0 V Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25 C40 A (IXGH) IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 80 A C (TAB) SSOA VGE = 15 V, TVJ = 125 C, RG = 10 ICM = 56 A G C (RBSOA) Clamped inductive load @ 0.8 VCES E PC TC = 25 C 150 W G = Gate, C = Collector, E = Emitter, TAB = Collector TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C Features Md Mounting torque (M3) TO-247 1.13/10 Nm/lb.in. International standard packages Maximum lead temperature for soldering 300 C Low VCE(sat) 1.6 mm (0.062 in.) from case for 10 s - for minimum on-state conduction Weight TO-247 6 g losses TO-268 4 g