2n7002k.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2n7002k.pdf Principales características:

2N7002K SEMICONDUCTOR N Channel MOSFET TECHNICAL DATA ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES E L B L ESD Protected 2000V. DIM MILLIMETERS High density cell design for low RDS(ON). _ A + 2.93 0.20 B 1.30+0.20/-0.15 Voltage controlled small signal switch. C 1.30 MAX 2 3 Rugged and reliable. D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 High saturation current capablity. 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 P P L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 MAXIMUM RATING (Ta=25 ) P 7 CHARACTERISTIC SYMBOL RATING UNIT M VDSS Drain-Source Voltage 60 V 1. SOURCE VGSS Gate-Source Voltage V 20 2. GATE 3. DRAIN ID Continuous 300 Drain Current mA IDP Pulsed (Note 1) 1200 PD Drain Power Dissipation (Note 2) 300 mW SOT-23 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range Note 1) Pulse Width 10 , Duty Cycle