krc660u-krc664u.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

krc660u-krc664u.pdf Principales características:

SEMICONDUCTOR KRC660U KRC664U EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High Packing Density. C 0.65 D 0.2+0.10/-0.05 G 0-0.1 EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT (TOP VIEW) _ H 0.9 + 0.1 T 0.15+0.1/-0.05 T 54 C G R1 Q1 Q2 B 1. Q1 IN (BASE) 2. Q , Q COMMON (EMITTER) 1 2 3. Q2 IN (BASE) 4. Q2 OUT (COLLECTOR) 5. Q1 OUT (COLLECTOR) E 1 2 3 USV MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 50 V PC * Collector Power Dissipation 200 mW VCEO Collector-Emitter Voltage 50 V Tj Junct