Todos los transistores

 

2sj166.pdf Principales características:

2sj1662sj166

SMD Type MOSFET P-Channel MOSFET 2SJ166 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-50V ID =-0.1 A (VGS =-10V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 50 (VGS =-4V) +0.1 1.9-0.1 Comp;ementary to 2SK1132 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -50 V Gate-Source Voltage VGS 7 Continuous Drain Current ID -100 mA Pulsed Drain Current (Note.1) IDM -200 Power Dissipation PD 200 mW Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 Note.1 PW 10ms,Duty Cycle 50% Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250 A, VGS=0V -50 V Zero Gate Voltage Drain Current IDSS VDS=-50V, VGS=0V -10 uA

 

Keywords - ALL TRANSISTORS. Principales características

 2sj166.pdf Design, MOSFET, Power

 2sj166.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj166.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.