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2sj210-3.pdf Principales características:

2sj210-32sj210-3

SMD Type MOSFET P-Channel MOSFET 2SJ210 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-60V ID =-200m A RDS(ON) 10 (VGS =-10V) 1 2 +0.02 +0.1 0.15 -0.02 0.95-0.1 RDS(ON) 15 (VGS =-4V) +0.1 1.9-0.2 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20 Continuous Drain Current ID -200 mA Pulsed Drain Current (Note.1) IDM -400 Power Dissipation PD 200 mW Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 Note.1 PW 10ms,Duty Cycle 50% Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250 A, VGS=0V -60 V Zero Gate Voltage Drain Current IDSS VDS=-60V, VGS=0V -1 uA G

 

Keywords - ALL TRANSISTORS. Principales características

 2sj210-3.pdf Design, MOSFET, Power

 2sj210-3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj210-3.pdf Database, Innovation, IC, Electricity

 

 

 


 
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