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h8050.pdf Principales características:

SMD Type Transistors NPN Transistors H8050 Features 1.70 0.1 Collector Power Dissipation PC=1W Collector Current IC=1.5A Comlementary to H8550 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current IC 1.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC= 100 A, IE=0 40 V Collector-emitter breakdown voltage VCEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage VEBO IE= 100 A, IC=0 5 V Collector cut-off current ICBO VCB= 40 V,IE=0 0.1 A Collector cut-off current ICE

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