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mxp6008ct.pdf Principales características:

MXP6008CT Datasheet N-Channel MOSFET Applications a Power Supply VDSS RDS(ON)(MAX) ID DC-DC Converters 60V 8m 109A Features Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized BVDSS Capability Ordering Information Park Number Package Brand MXP6008CT TO-220 MXP TC=25 unless otherwise specified Absolute Maximum Ratings Symbol Parameter Value Unit VDSS Drain-to-Source Voltage 60 V a Continuous Drain Current 109 ID A IDM Pulsed Drain Current @VG=10V 436 Power Dissipation 150 W PD Derating Factor above 25 1.00 W/ VGS Gate-to-Source Voltage +/-20 V Single Pulse Avalanche Energy EAS 800 mJ (L=1mH, IAS=40A) IAS Pulsed Avalanche Energy Figure 9 A TJ and TSTG Operating Junction and Storage Temperature Range -55 to 175 Thermal Resistance Symbol Parameter Min Typ Max U

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 mxp6008ct.pdf Design, MOSFET, Power

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