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2n6107 2n6111 2n6288 2n6109 2n6292.pdf datasheet:

2n6107_2n6111_2n6288_2n6109_2n62922n6107_2n6111_2n6288_2n6109_2n6292

Order this document MOTOROLA by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 (See 2N6050) Complementary Silicon Plastic PNP Power Transistors 2N6107 . . . designed for use in general purpose amplifier and switching applications. 2N6109* DC Current Gain Specified to 7.0 Amperes hFE = 30 150 @ IC = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc All Devices 2N6111 Collector Emitter Sustaining Voltage NPN VCEO(sus) = 30 Vdc (Min) 2N6111, 2N6288 2N6288 VCEO(sus) = 50 Vdc (Min) 2N6109 VCEO(sus) = 70 Vdc (Min) 2N6107, 2N6292 High Current Gain Bandwidth Product 2N6292* fT = 4.0 MHz (Min) @ IC = 500 mAdc 2N6288, 90, 92 fT = 10 MHz (Min) @ IC = 500 mAdc 2N6107, 09, 11 *Motorola Preferred Device

 

Keywords - ALL TRANSISTORS DATASHEET

 2n6107 2n6111 2n6288 2n6109 2n6292.pdf Design, MOSFET, Power

 2n6107 2n6111 2n6288 2n6109 2n6292.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n6107 2n6111 2n6288 2n6109 2n6292.pdf Database, Innovation, IC, Electricity

 

 
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