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2n6107 2n6111 2n6288 2n6109 2n6292.pdf Principales características:

Order this document MOTOROLA by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 (See 2N6050) Complementary Silicon Plastic PNP Power Transistors 2N6107 . . . designed for use in general purpose amplifier and switching applications. 2N6109* DC Current Gain Specified to 7.0 Amperes hFE = 30 150 @ IC = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc All Devices 2N6111 Collector Emitter Sustaining Voltage NPN VCEO(sus) = 30 Vdc (Min) 2N6111, 2N6288 2N6288 VCEO(sus) = 50 Vdc (Min) 2N6109 VCEO(sus) = 70 Vdc (Min) 2N6107, 2N6292 High Current Gain Bandwidth Product 2N6292* fT = 4.0 MHz (Min) @ IC = 500 mAdc 2N6288, 90, 92 fT = 10 MHz (Min) @ IC = 500 mAdc 2N6107, 09, 11 *Motorola Preferred Device

Keywords - ALL TRANSISTORS. Principales características

 2n6107 2n6111 2n6288 2n6109 2n6292.pdf Design, MOSFET, Power

 2n6107 2n6111 2n6288 2n6109 2n6292.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n6107 2n6111 2n6288 2n6109 2n6292.pdf Database, Innovation, IC, Electricity