2sj493.pdf datasheet:

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ493 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION This product is P-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SJ493 Isolated TO-220 FEATURES Super low on-state resistance RDS(on)1 = 100 m (MAX.) (VGS = 10 V, ID = 8 A) RDS(on)2 = 185 m (MAX.) (VGS = 4 V, ID = 8 A) Low Ciss Ciss = 1210 pF (TYP.) Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS(AC) 20 V Gate to Source Voltage (VDS = 0 V) Note1 VGSS(DC) 20, 0 V Drain Current (DC) ID(DC) 16 A Drain Current (pulse) Note2 ID(pulse) 64 A Total Power Dissipation (TC = 25 C) PT 30 W Total Power Dissipation (TA = 25 C) PT 2.0 W Channel T