Todos los transistores

2sj673.pdf Principales características:

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ673 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ673 is P-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SJ673 Isolated TO-220 (MP-45F) FEATURES Super low on-state resistance (Isolated TO-220) RDS(on)1 = 20 m MAX. (VGS = -10 V, ID = -18 A) RDS(on)2 = 31 m MAX. (VGS = -4.0 V, ID = -18 A) Low C iss C iss = 4600 pF TYP. Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage (VGS = 0 V) VDSS -60 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V Drain Current (DC) (TC = 25 C) ID(DC) m36 A Drain Current (pulse) Note1 ID(pulse) m144 A Total Power Dissipation (TC = 25 C) PT1 32 W Total Power Dissipation (TA = 25 C) PT2 2.0 W Channel Temperature Tch 150 C Storage

Keywords - ALL TRANSISTORS. Principales características

 2sj673.pdf Design, MOSFET, Power

 2sj673.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj673.pdf Database, Innovation, IC, Electricity