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2sk3900.pdf Principales características:

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3900 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3900 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3900-ZP TO-263 (MP-25ZP) FEATURES Super low on-state resistance (TO-263) RDS(on)1 = 8.0 m MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 m MAX. (VGS = 4.5 V, ID = 41 A) Low C iss C iss = 3500 pF TYP. Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS 20 V Drain Current (DC) (TC = 25 C) ID(DC) 82 A Drain Current (pulse) Note1 ID(pulse) 246 A Total Power Dissipation (TC = 25 C) PT1 104 W Total Power Dissipation (TA = 25 C) PT2 1.5 W Channel Temperature Tch 150 C Storage Temperature

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 2sk3900.pdf Design, MOSFET, Power

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