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ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf Principales características:

ne680xx_2sc5013_2sc5008_2sc4228_2sc3585_2sc3587_2sc4095ne680xx_2sc5013_2sc5008_2sc4228_2sc3585_2sc3587_2sc4095

NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 10 GHz LOW NOISE FIGURE 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. 19 (3 PIN ULTRA Both the chip and micro-x versions are suitable for applications 18 (SOT 343 STYLE) SUPER MINI MOLD) up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680's high fT makes it ideal for low voltage/low current applications, down to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is 35 mA. For higher current applications see the NE681 series. 30 (SOT 323 STY

 

Keywords - ALL TRANSISTORS. Principales características

 ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf Design, MOSFET, Power

 ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf Database, Innovation, IC, Electricity

 

 
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