osg55r190af osg55r190df osg55r190ff osg55r190pf.pdf Principales características:

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OSG55R190xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG55R190AF, OSG55R190DF, OSG55R190FF, OSG55R190PF , Enhancement Mode N-Channel Power MOSFET General Description V 600 V DS, min@Tjmax OSG55R190xF uses advanced GreenMOSTM I 60 A technology to provide low R , low gate D, pulse DS(ON) charge, fast switching and excellent avalanche R 190 m DS(ON), max @ VGS=10 V characteristics. This device is suitable for active Q 17.7 nC g power factor correction and switching mode power supply applications. Schematic and Package Information Schematic Diagram Pin Assignment Top View TO251 TO252 TO220F TO220

 

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