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2sc1317 e.pdf Principales características:

Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SA719 and 2SA720 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA719 and 2SA720. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to 2SC1317 30 VCBO V +0.2 +0.2 base voltage 2SC1318 60 0.45 0.1 0.45 0.1 1.27 1.27 Collector to 2SC1317 25 VCEO V emitter voltage 2SC1318 50 Emitter to base voltage VEBO 7 V 1 2 3 1 Emitter Peak collector current ICP 1 A 2 Collector 3 Base 2.54 0.15 Collector current IC 500 mA JEDEC TO 92 EIAJ SC 43A Collector power dissipation PC 625 mW Junction temperature Tj 150 C Storage temperature Tstg 55 +150 C Electrical Characteristics (Ta=25 C) Parameter Symbol Conditions m

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