2sk1478.pdf Principales características:
Power F-MOS FETs 2SK1478 2SK1478 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) RDS(on)= 0.4 (typ) 5.5 0.2 2.7 0.2 High-speed switching tf = 44ns(typ) No secondary breakdown 3.1 0.1 High breakdown voltage, large allowable power dissipation Applications 1.3 0.2 Non-contact relay 1.4 0.1 Solenoid drive +0.2 0.5 -0.1 0.8 0.1 Motor drive Control equipment 2.54 0.25 Switching mode regulator 5.08 0.5 1 2 3 Absolute Maximum Ratings (Tc = 25 C) 1 Gate Parameter Symbol Rating Unit 2 Drain 3 Source Drain-Source breakdown voltage VDSS 250 V TO-220 Full Pack Package (a) Gate-Source voltage VGSS 20 V DC ID 8 A Drain current Pulse IDP 16 A TC =25 C 40 Allowable power PD W dissipation Ta =25 C 2 Channel temperature Tch 150 C Storage temperature Tstg 55 to 150
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2sk1478.pdf Design, MOSFET, Power
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