ph3030al.pdf Principales características:
PH3030AL N-channel TrenchMOS logic level FET Rev. 03 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications Consumer applications Notebook Voltage Regulator Module (VRM) Desktop Voltage Regulator Module (VRM) 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj 25 C; Tj 175 C - - 30 V [1] ID drain current Tmb =25 C; VGS =10V; - - 100 A see Figure 1 Ptot total power Tmb = 25 C; see Figure 2 - - 81 W
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